Номер в каталоге : K9LBG08U0D
Function : FLASH MEMORY — 4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory
Производитель : Samsung
Offered in 4Gx8bit the K9LBG08U0D is a 32G-bit NAND Flash Memory with spare 1744M-bit. The device is offered in 3.3V Vcc. Its
NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed
in typical 800μs on the 4314-byte page and an erase operation can be performed in typical 1.5ms on a (512K+27.25K)byte block.
Data in the data register can be read out at 30ns(K9XDG08U5D: 50ns) cycle time per byte. The I/O pins serve as the ports for
address and data input/output as well as command input. The on-chip write controller automates all program and erase functions
including pulse repetition where required and internal verification and margining of data. Even the write-intensive systems can take
advantage of the K9LBG08U0D′s extended reliability of TBD cycles by providing ECC(Error Correcting Code) with real time mapping-
out algorithm. The K9LBG08U0D is an optimum solution for large nonvolatile storage applications such as solid state file storage
and other portable applications requiring non-volatility.
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