Harris IRF320 даташиты PDF

Номер в каталоге : IRF320

функция : 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

Производитель : Harris Semiconductor

цоколевка :
IRF320 datasheet

Описание :

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

даташит PDF Download

IRF320 pdf

Другие с той же файл данные : IRF320, IRF321, IRF322, IRF323