FDN335N Даташит

Номер в каталоге : FDN335N

Function : N-Channel 2.5V Specified PowerTrench® MOSFET

Производитель : Fairchild Semiconductor

цоколевка :

FDN335N datasheet

Описание :

Description
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
superior switching performance.

Features
• 1.7 A, 20 V. Rds(on)= 0.07 Ω @ Vgs= 4.5 V
Rds(on)= 0.100 Ω @ Vgs= 2.5 V.
• Low gate charge (3.5nC typical).
• High performance trench technology for extremely low Rds(on)
• High power and current handling capability.

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FDN335N