FDG6306P Даташит

Номер в каталоге : FDG6306P

Function : P-Channel 2.5V Specified PowerTrench

Производитель : Fairchild Semiconductor

цоколевка :

FDG6306P datasheet

Описание :

General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management
applications with a wide range of gate drive voltage (2.5V – 12V).

–0.6 A, –20 V. Rds(on)= 420 mΩ@ VGS= –4.5 V
Rds(on)= 630 mΩ@ VGS= –2.5 V
Low gate charge
High performance trench technology for extremely low Rds(on)
Compact industry standard SC70-6 surface mount package

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FDG6306P pdf

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