BSS123 Даташит

Номер в каталоге : BSS123

Function : N-CHANNEL ENHANCEMENT MODE MOSFET

Производитель : Diodes Incorporated.

цоколевка :

BSS123 datasheet

Описание :

Description
These N-Channel enhancement mode field effect transistors are produced using DIODES proprietary, high density, uses advanced trench technology.
These productshave been designed to minimizon-state resistance while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltagelow current applications such as:

Features and Benefits
— Low Gate Threshold Voltage
— Low Input Capacitance
— Fast Switching Speed
— Low Input/Output Leakage
— High Drain-Source Voltage Rating
— Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
— Halogen and Antimony Free. “Green” Device (Note 3)
— Qualified to AEC-Q101 Standards for High Reliability

даташит PDF Download

BSS123 pdf

Другие с той же файл данные :
BSS123,BSS123-7-F,BSS123Q-13,BSS123Q-7