BSS123 Даташит / Fairchild

Номер в каталоге : BSS123

функция : N-Channel Logic Level Enhancement Mode Field Effect Transistor

Производитель : Fairchild Semiconductor

цоколевка :

BSS123 datasheet

Описание :

General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary,high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

— 0.17 A, 100 V. Rds(on) = 6W @ Vgs= 10 V
Rds(on) = 10W @ Vgs= 4.5 V
— High density cell design for extremely lowRDS(ON)
— Rugged and Reliable
— Compact industry standard SOT-23 surface mount package

даташит PDF Download

BSS123 pdf

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