Номер в каталоге : 30J124, GT30J124
функция : Discrete IGBTs
Производитель : Toshiba
цоколевка :
Описание : Prior to the development of IGBTs, power MOSFETs were used for power amplifier applications which require high input impedance and fast switching. However, at high voltages, the on-state resistance rapidly increases as the breakdown voltage increases. It is thus difficult to improve the conduction loss of power MOSFETs.
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Другие с той же файл данные : GT30F131, 30F131, GT30G124, GT30G127, GT60M303A