2N7002T даташиты PDF

Номер в каталоге : 2N7002T

Function : 60V; 15mA N-channel enchancement mode field effect transistor

Производитель : Diodes Incorporated.

цоколевка :

2N7002T datasheet

Описание :

Description and Applications
This new generation MOSFET has been designed to minimize the on state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management

•DC-DC Converters
• Power management functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays Memories, Transistors, etc

•Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
•  Totally Lead Free, Full RoHS Compliant
•  Halogen and Antimony Free. «Green» Device
•  Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data
•Case: SOT523
• Case Material: Molded Plastic.“Green” Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)

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2N7002T pdf

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